Consider the following statements A and B and identify the …

Physics Semiconductor Electronics P -N Junction and Semiconductor Diode / Semiconductor Devices MCQ (Single Correct)

Consider the following statements A and B and identify the correct choice of the given answers

: The width of the depletion layer in a P-N junction diode increases in forwards bias A is true and B is false

: In an intrinsic semiconductor the fermi energy level is exactly in the middle of the forbidden gap Both A and B are false

A is false and B is true

Both A and B are true

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The correct answer is:

In forward biasing of PN junction diode width of depletion layer decreases. In intrinsic semiconductor fermi energy level is exactly in the middle of the forbidden gap

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