Pure Si at 300 K has equal electron (n e ) and hole (n h ) concentrations of 1.5 × 10 16 m –3 . Doping by indium increases n h to 4.5 × 10 22 m –3 . Calculate n e in the doped Si-
Text Solution
Verified by ExpertsThe correct answer is:
A
For intrinsic semiconductor:

Initially,

So,

After doping:

Hence,



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