If a semiconductor has an intrinsic carrier concentration of 1.41 × 10 16 m –3 , when doped with 10 21 m –3 phosphorus, then the concentration of holes at room temperature will be –
Text Solution
Verified by ExpertsThe correct answer is:
D
Phosphorus is pentavalent impurity. Its doping will not effect the concentration of holes. So number of holes will be equal to same as in intrinsic semiconductor. So n h = 1.41 × 10 16 m –3
Prepare Smarter with CGP Edu
Get practice questions, solutions, and test series in one place.
Write a Review
Share your experience with this question and solution.
Commentary
Send your comment, doubt, correction, or feedback to admin.
Similar Questions
Explore conceptually related problems
A silicon speciman is made into a P-type semi-conductor by dopping, on an average, one Indium atom …
The typical ionisation energy of a donor in silicon is
A 2V battery is connected across the points A and B as shown in the figure given below. Assuming th…
The diode used in the circuit shown in the figure has a constant voltage drop of 0.5 V at all curre…
For a transistor amplifier in common emitter configuration for load impedance of 1 k Ω Ω (h fe = 50…
In semiconductor the concentrations of electrons and holes are 8 × × 10 18 /m 3 and 5 × × 10 18 /m …