The breakdown in a reverse biased p – n junction diode is more likely to occur due to.
Text Solution
Verified by ExpertsThe correct answer is:
B
in reverse biasing, the minority charge carries will be accelerated due to reverse biasing, which on striking with atoms cause ionization resulting in secondary electrons and thus produce more number of charge carries.
When doping concentration is large, there will be large number of ions in the depletion region, which will give rise to a strong electric field.
Prepare Smarter with CGP Edu
Get practice questions, solutions, and test series in one place.
Write a Review
Share your experience with this question and solution.
Commentary
Send your comment, doubt, correction, or feedback to admin.
Similar Questions
Explore conceptually related problems
A silicon speciman is made into a P-type semi-conductor by dopping, on an average, one Indium atom …
The typical ionisation energy of a donor in silicon is
A 2V battery is connected across the points A and B as shown in the figure given below. Assuming th…
The diode used in the circuit shown in the figure has a constant voltage drop of 0.5 V at all curre…
For a transistor amplifier in common emitter configuration for load impedance of 1 k Ω Ω (h fe = 50…
In semiconductor the concentrations of electrons and holes are 8 × × 10 18 /m 3 and 5 × × 10 18 /m …